| 发明名称 |
Method of forming phase change memory devices in a pulsed DC deposition chamber |
| 摘要 |
A phase change memory (530) including an ovonic threshold switch (122) is formed using a pulsed DC deposition chamber (12) using pulsed DC. Pulsed DC is used to deposit a chalcogenide film (132). Pulsed DC may be also used to deposit a carbon film (118, 120, 124).
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| 申请公布号 |
EP1912266(A1) |
申请公布日期 |
2008.04.16 |
| 申请号 |
EP20060425696 |
申请日期 |
2006.10.10 |
| 申请人 |
STMICROELECTRONICS S.R.L. |
发明人 |
HAMAMJY, ROGER;CHANG, KUO-WEI;LEE, SEAN JONG;LIM, CHONG W. |
| 分类号 |
H01L45/00;C23C14/06 |
主分类号 |
H01L45/00 |
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