| 摘要 |
The present disclosure relates generally to Hf-comprising materials for use in, for example, the insulator of a RRAM device, and to methods for making such materials. In one aspect, the disclosure provides a method for the manufacture of a layer of material over a substrate, said method including
a) providing a substrate, andb) depositing a layer of material on said substrate via ALD at a temperature of from 250 to 500° C., said depositing step comprising:
at least one HfX4 pulse, andat least one trimethyl-aluminum (TMA) pulse,;wherein X is a halogen selected from Cl, Br, I and F and is preferably Cl. |
