TANDEM SOLAR CELL

摘要

This application is related to a method of manufacturing a solar cell device comprising providing a substrate comprising Ge or GaAs; forming a first tunnel junction on the substrate, wherein the first tunnel junction comprises a first n-type layer comprising InGaP:Te, and a first alloy layer comprising AlxGa(1−x)As and having a lattice constant; adding a material into the first alloy layer to change the lattice constant; and forming a first p-n junction on the first tunnel junction.

主权项

1. A method of manufacturing a solar cell device, comprising:
providing a substrate comprising Ge or GaAs; forming a first tunnel junction on the substrate, comprising: forming a first n-type layer comprising InGaP:Te, and forming a first alloy layer, the first alloy layer comprising AlxGa(1−x)As and an element with atomic number larger than that of gallium for decreasing a lattice mismatch between the alloy layer and the substrate; and forming a first p-n junction on the first tunnel junction, wherein the element comprises In,Tl,Sb,Bi,Sn,Pb,Te,Po,Cd or Hg, and wherein a concentration of the element is 1˜2%, which is equal to 3.5×10̂21˜1.7×10̂22 (l/cm̂3).