| 发明名称 |
ELIMINATING EMISSIVE SUB-BANDGAP STATES IN NANOCRYSTALS |
| 摘要 |
The size-dependent band-gap tunability and solution processability of nanocrystals (NCs) make them attractive candidates for optoelectronic applications. One factor that presently limits the device performance of NC thin films is sub-bandgap states, also referred to as trap states. Trap states can be controlled by surface treatment of the nanocrystals. |
| 申请公布号 |
US2016336477(A1) |
申请公布日期 |
2016.11.17 |
| 申请号 |
US201615095001 |
申请日期 |
2016.04.08 |
| 申请人 |
MASSACHUSETTS INSTITUTE OF TECHNOLOGY |
发明人 |
Hwang Gyuweon;Kim Donghun;Cordero Jose M.;Wilson Mark W. B.;Chuang Chia-Hao M.;Grossman Jeffrey C.;Bawendi Moungi G. |
| 分类号 |
H01L31/18;H01L51/00;H01L31/0445;H01L31/036;H01L31/032 |
主分类号 |
H01L31/18 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method of modifying a surface of an MX nanocrystal comprising contacting a surface of the nanocrystal with an oxidizing agent. |
| 地址 |
Cambridge MA US |
