发明名称 MODULATION CIRCUIT AND SEMICONDUCTOR DEVICE INCLUDING THE SAME
摘要 A modulation circuit includes a load and a transistor serving as a switch. The transistor has an oxide semiconductor layer in which hydrogen concentration is 5×1019/cm3 or less. The off-state current of the transistor is 1×10−13 A or less. A modulation circuit includes a load, a transistor serving as a switch, and a diode. The load, the transistor, and the diode are connected in series between the terminals of an antenna. The transistor has an oxide semiconductor layer in which hydrogen concentration is 5×1019/cm3 or less. An off-state current of the transistor is 1×10−13 A or less. On/off of the transistor is controlled in accordance with a signal inputted to a gate of the transistor. The load is a resistor, a capacitor, or a combination of a resistor and a capacitor.
申请公布号 US2016336455(A1) 申请公布日期 2016.11.17
申请号 US201615159182 申请日期 2016.05.19
申请人 Semiconductor Energy Laboratory Co., Ltd. 发明人 KAMATA Koichiro
分类号 H01L29/786;G06K19/077;H01L23/66;H01L27/06;H01L49/02 主分类号 H01L29/786
代理机构 代理人
主权项 1. (canceled)
地址 Atsugi-shi JP