HIGH-K METAL GATE

摘要

An integrated circuit containing metal replacement gates may be formed by forming a nitrogen-rich titanium-based barrier between a high-k gate dielectric layer and a metal work function layer of a PMOS transistor. The nitrogen-rich titanium-based barrier is less than 1 nanometer thick and has an atomic ratio of titanium to nitrogen of less than 43:57. The nitrogen-rich titanium-based barrier may be formed by forming a titanium based layer over the gate dielectric layer and subsequently adding nitrogen to the titanium based layer. The metal work function layer is formed over the nitrogen-rich titanium-based barrier.

主权项

1. An integrated circuit, comprising:
a substrate comprising semiconductor material; and a p-channel metal oxide semiconductor (PMOS) transistor, comprising:
a high-k gate dielectric layer over said substrate;a nitrogen-rich titanium-based barrier over said high-k gate dielectric layer; anda PMOS metal work function layer over said nitrogen-rich titanium-based barrier, wherein said PMOS metal work function layer is part of a metal gate of said PMOS transistor, wherein the metal gate includes a fill metal layer over the PMOS metal work function layer.