| 发明名称 |
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME |
| 摘要 |
A method for fabricating semiconductor device is disclosed. The method includes the steps of: providing a substrate; using a first patterned mask to form a gate dielectric layer on the substrate; removing the first patterned mask; removing part of the gate dielectric layer; and forming a shallow trench isolation (STI) adjacent to two sides of the gate dielectric layer. |
| 申请公布号 |
US2016336417(A1) |
申请公布日期 |
2016.11.17 |
| 申请号 |
US201514749610 |
申请日期 |
2015.06.24 |
| 申请人 |
UNITED MICROELECTRONICS CORP. |
发明人 |
Hsiao Shih-Yin;Yu Kun-Huang;Li Nien-Chung;Lee Wen-Fang;Wang Chih-Chung |
| 分类号 |
H01L29/423;H01L27/088;H01L29/51;H01L29/66;H01L21/8234;H01L29/06 |
主分类号 |
H01L29/423 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method for fabricating semiconductor device, comprising:
providing a substrate; using a first patterned mask to form a gate dielectric layer on the substrate; removing the first patterned mask; removing part of the gate dielectric layer; and forming a shallow trench isolation (STI) adjacent to two sides of the gate dielectric layer. |
| 地址 |
Hsin-Chu City TW |
