| 发明名称 |
HORIZONTAL GATE ALL AROUND AND FINFET DEVICE ISOLATION |
| 摘要 |
Embodiments described herein generally relate to methods and device structures for horizontal gate all around (hGAA) isolation and fin field effect transistor (FinFET) isolation. A superlattice structure comprising different materials arranged in an alternatingly stacked formation may be formed on a substrate. In one embodiment, at least one of the layers of the superlattice structure may be oxidized to form a buried oxide layer adjacent the substrate. |
| 申请公布号 |
US2016336405(A1) |
申请公布日期 |
2016.11.17 |
| 申请号 |
US201615152273 |
申请日期 |
2016.05.11 |
| 申请人 |
Applied Materials, Inc. |
发明人 |
SUN Shiyu;YOSHIDA Naomi;GUARINI Theresa Kramer;JUN Sung Won;PENA Vanessa;SANCHEZ Errol Antonio C.;COLOMBEAU Benjamin;CHUDZIK Michael;WOOD Bingxi;KIM Nam Sung |
| 分类号 |
H01L29/15;H01L29/423;H01L29/06;H01L29/49;H01L29/45;H01L29/165;H01L29/78 |
主分类号 |
H01L29/15 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A device structure, comprising:
a substrate having a superlattice structure formed thereon, the superlattice structure comprising:
a silicon material layer;a first silicon germanium material layer comprising between about 20% and about 40% germanium; anda second silicon germanium material layer comprising between about 50% and about 80% germanium, wherein the silicon material layer, the first silicon germanium material layer, and the second silicon germanium layer are disposed in a stacked arrangement. |
| 地址 |
Santa Clara CA US |
