| 发明名称 |
Transistor with Wurtzite Channel |
| 摘要 |
A device includes a source region, a drain region, and a wurtzite semiconductor between the source region and the drain region. A source-drain direction is parallel to a [01-10] direction or a [−2110] direction of the wurtzite semiconductor. The device further includes a gate dielectric over the wurtzite semiconductor, and a gate electrode over the gate dielectric. |
| 申请公布号 |
US2016336389(A1) |
申请公布日期 |
2016.11.17 |
| 申请号 |
US201615221067 |
申请日期 |
2016.07.27 |
| 申请人 |
Taiwan Semiconductor Manufacturing Company, Ltd. ;National Taiwan University |
发明人 |
Chang Hung-Chih;Chen Pin-Shiang;Liu Chee-Wee;Pan Samuel C. |
| 分类号 |
H01L29/04;H01L21/02;H01L21/306;H01L29/06;H01L29/66;H01L29/423;H01L29/20;H01L21/762;H01L29/16;H01L21/3105 |
主分类号 |
H01L29/04 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method comprising:
growing a wurtzite semiconductor layer from a substrate, wherein the substrate ha a hexagonal structure; patterning the wurtzite semiconductor layer to form a wurtzite semiconductor region; forming a gate dielectric over a middle portion of the wurtzite semiconductor region; forming a gate electrode over the gate dielectric; and forming a source/drain region on a side of the gate electrode. |
| 地址 |
Hsin-Chu TW |
