METHODS AND APPARATUSES HAVING MEMORY CELLS INCLUDING A MONOLITHIC SEMICONDUCTOR CHANNEL

摘要

Methods for forming a string of memory cells, apparatuses having a string of memory cells, and systems are disclosed. One such method for forming a string of memory cells forms a source material over a substrate. A capping material may be formed over the source material. A select gate material may be formed over the capping material. A plurality of charge storage structures may be formed over the select gate material in a plurality of alternating levels of control gate and insulator materials. A first opening may be formed through the plurality of alternating levels of control gate and insulator materials, the select gate material, and the capping material. A channel material may be formed along the sidewall of the first opening. The channel material has a thickness that is less than a width of the first opening, such that a second opening is formed by the semiconductor channel material.

主权项

1. A method for forming a string of memory cells, the method comprising:
forming a plurality of charge storage structures in a plurality of alternating levels of control gate and insulator materials; forming a first opening through the plurality of alternating levels of control gate and insulator materials; and forming a vertical semiconductor material along a sidewall of the opening, the vertical semiconductor material coupled to a source material and adjacent to the plurality of charge storage structures, wherein the plurality of charge storage structures are separated from the vertical semiconductor material by at least a dielectric material and the vertical semiconductor material having a thickness that is less than a width of the first opening such that a second opening is formed by the semiconductor channel material.