Three Dimensional Semiconductor Memory Devices and Methods of Fabricating the Same

摘要

A semiconductor memory device is provided including a substrate; a stack structure including gate electrodes vertically stacked on the substrate; a vertical channel part penetrating the gate electrodes; a dopant region provided in the substrate at a side of the stack structure; a common source plug on the substrate and electrically connected to the dopant region; and cell contact plugs connected to the gate electrodes, respectively. A top surface of the common source plug is at a different level from top surfaces of the cell contact plugs.

主权项

1. A semiconductor memory device comprising:
a substrate; a stack structure including gate electrodes vertically stacked on the substrate; a vertical channel part penetrating the gate electrodes; a dopant region in the substrate at a side of the stack structure; a common source plug on the substrate, the common source plug electrically connected to the dopant region; and cell contact plugs connected to the gate electrodes, respectively, wherein a top surface of the common source plug is at a different level from top surfaces of the cell contact plugs.