SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THE SAME

摘要

A semiconductor device includes an insulating interlayer on a first region of a substrate. The insulating interlayer has a recess therein and includes a low-k material having porosity. A damage curing layer is formed on an inner surface of the recess. A barrier pattern is formed on the damage curing layer. A copper structure fills the recess and is disposed on the barrier pattern. The copper structure includes a copper pattern and a copper-manganese capping pattern covering a surface of the copper pattern. A diffusion of metal in a wiring structure of the semiconductor device may be prevented, and thus a resistance of the wiring structure may decrease.

主权项

1. A semiconductor device, comprising:
an insulating interlayer on a substrate, the insulating interlayer having a recess therein and including a low-k material having porosity; a damage curing layer on an inner surface of the recess; a barrier pattern on the damage curing layer; and a copper structure filling the recess having the barrier pattern therein, the copper structure including a copper pattern and a copper-manganese capping pattern covering a surface of the copper pattern.