CRYSTALLIZATION METHODS

摘要

Apparatus and methods of treating a substrate with an amorphous semiconductor layer, or a semiconductor layer having small crystals, to form large crystals in the substrate are described. A treatment area of the substrate is identified and melted using a progressive melting process of delivering pulsed energy to the treatment area. The treatment area is then recrystallized using a progressive crystallization process of delivering pulsed energy to the area. The pulsed energy delivered during the progressive crystallization process is selected to convert the small crystals into large crystals as the melted material freezes.

主权项

1. A method of treating a substrate, comprising:
maintaining an ambient temperature of a substrate below 100° C. while performing a thermal process on the substrate, the thermal process comprising: delivering a first laser pulse having energy of 0.45 J/cm2 to 0.6 J/cm2 to the substrate from a first laser with a pulse duration selected to melt a portion of the substrate; delivering a second laser pulse having energy of 0.45 J/cm2 to 0.6 J/cm2 to the substrate from a second laser with a pulse duration selected to melt the portion of the substrate; after a first freeze period of 700 nsec, delivering a third laser pulse having energy of 0.45 J/cm2 to 0.6 J/cm2 and duration of 26 nsec to the substrate from a third laser; and after a second freeze period, delivering a fourth laser pulse having energy less than the energy of the first, second, and third laser pulses to the substrate from a fourth laser.