| 摘要 |
<P>PROBLEM TO BE SOLVED: To solve the problem that setting a high clamp voltage causes an increase in power consumption in an FET for driving a load, resulting in an increase in the peak temperature of the FET. <P>SOLUTION: A load driving circuit 1 is provided with an FET 10, a clamp circuit 20, and a control circuit 30. The FET 10 is a transistor for driving a load 90. The clamp circuit 20 is connected between a gate and a drain of the FET 10. The clamp circuit 20 interrupts the flow of carries from the gate to the drain when a voltage between the gate and the drain of the FET 10 is not higher than a predetermined clamp voltage, and permits the flow of carriers from the gate to the drain when the voltage between the gate and the drain is higher than the predetermined clamp voltage. The control circuit 30 controls the magnitude of the clamp voltage on the basis of a previously set program. <P>COPYRIGHT: (C)2007,JPO&INPIT |
