| 摘要 |
PROBLEM TO BE SOLVED: To smoothly eliminate a resist from a surface of a substrate covered with the resist in which a hard layer is formed on a surface by high dose ion implantation.SOLUTION: A substrate processing apparatus 1 includes: a spin chuck 5; and an SPM supply unit 6 which supplies a sulfuric acid/hydrogen peroxide mixture (SPM) to a substrate W held by the spin chuck 5. The SPM supply unit 6 includes: mixing means 30 which mixes a hydrogen peroxide solution with hydrofluoric acid to generate a mixture; and an SPM nozzle 14 which mixes the mixture with sulfuric acid to generate an HF mixture SPM.SELECTED DRAWING: Figure 2 |
