| 发明名称 |
THERMOELECTRIC DEVICE |
| 摘要 |
A thermoelectric device includes a semiconductor stacked thin film including a SiGe layer and a Si layer in contact with the SiGe layer. The SiGe has a Si:Ge composition ratio by atomic number ratio within a range of 85:15 to 63:37. The stacked thin film has a plurality of stacked structures each having the SiGe layer and the Si layer. |
| 申请公布号 |
US2016240761(A1) |
申请公布日期 |
2016.08.18 |
| 申请号 |
US201615018024 |
申请日期 |
2016.02.08 |
| 申请人 |
TDK CORPORATION |
发明人 |
MAEKAWA Kazuya;ASATANI Takashi |
| 分类号 |
H01L35/26;H01L35/22 |
主分类号 |
H01L35/26 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A thermoelectric device comprising:
a semiconductor stacked thin film including a SiGe layer and a Si layer in contact with the SiGe layer, wherein the SiGe has a Si:Ge composition ratio by atomic number ratio within a range of 85:15 to 63:37; and the stacked thin film has a plurality of stacked structures each having the SiGe layer and the Si layer. |
| 地址 |
Tokyo JP |
