发明名称 |
Trench MOSFET with multiple P-bodies for ruggedness and on-resistance improvements |
摘要 |
A vertical semiconductor power device includes a plurality of semiconductor power cells having a drain disposed at a bottom of a semiconductor substrate. Each of the cells includes a gate surrounded by a body region encompassing a source region. The body region further includes multiple body-dopant implanted regions having a non-Gaussian distribution dopant profile for reducing a width of a transition region transitioning between the multiple body-dopant implanted regions and an epitaxial region underneath having a different conductivity type from the multiple body-dopant implanted regions.
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申请公布号 |
US2009026533(A1) |
申请公布日期 |
2009.01.29 |
申请号 |
US20070880939 |
申请日期 |
2007.07.24 |
申请人 |
FORCE-MOS TECHNOLOGY CORPORATION |
发明人 |
HSHIEH FWU-IUAN |
分类号 |
H01L29/78;H01L21/336 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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