| 发明名称 |
RESISTIVE MEMORY DEVICES |
| 摘要 |
A resistive memory device includes: a first electrode; a variable resistive material layer that is formed on the first electrode and includes a metal oxide NxMOy (wherein 0.001<x<0.30 and 0.5<y<2.5) doped with nitrogen; and a second electrode that is formed on the variable resistive material layer. The variable resistive material layer has a multibit memory characteristic. |
| 申请公布号 |
US2016163979(A1) |
申请公布日期 |
2016.06.09 |
| 申请号 |
US201514955096 |
申请日期 |
2015.12.01 |
| 申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
LEE SEUNG-RYUL;BAEK IN-GYU;MISHA SAIFUL-HAQUE;HWANG HYUN-SANG |
| 分类号 |
H01L45/00;H01L27/24 |
主分类号 |
H01L45/00 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A resistive memory device comprising:
a first electrode; a variable resistive material layer formed on the first electrode, the variable resistive material layer including a metal oxide doped with nitrogen NxMOy (wherein 0.001<x<0.30 and 0.5<y<2.5), the variable resistive material layer configured to exhibit a multibit memory characteristic; and a second electrode formed on the variable resistive material layer. |
| 地址 |
SUWON-SI KR |
