| 发明名称 |
TRANSITION METAL OXIDE RESISTIVE SWITCHING DEVICE WITH DOPED BUFFER REGION |
| 摘要 |
A resistive switching memory comprising a first electrode and a second electrode; an active resistive switching region between the first electrode and the second electrode, the resistive switching region comprising a transition metal oxide and a dopant comprising a ligand, the dopant having a first concentration; a first buffer region between the first electrode and the resistive switching material, the first buffer region comprising the transition metal oxide and the dopant, wherein the dopant has a second concentration that is greater than the first concentration. In one embodiment, the second concentration is twice the first concentration. In one embodiment, the first buffer region is thicker than the active resistive switching region. |
| 申请公布号 |
US2016163978(A1) |
申请公布日期 |
2016.06.09 |
| 申请号 |
US201514937735 |
申请日期 |
2015.11.10 |
| 申请人 |
Symetrix Memory, LLC |
发明人 |
Paz de Araujo Carlos A.;Celinska Jolanta;McWilliams Christopher R. |
| 分类号 |
H01L45/00 |
主分类号 |
H01L45/00 |
| 代理机构 |
|
代理人 |
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| 主权项 |
1. A resistive switching memory comprising:
a first electrode and a second electrode; an active resistive switching region between said first electrode and said second electrode, said resistive switching region comprising a transition metal oxide and a dopant comprising a ligand, said dopant having a first concentration; and a first buffer region between said first electrode and said resistive switching material, said first buffer region comprising said transition metal oxide and said dopant, wherein said dopant has a second concentration that is greater than said first concentration. |
| 地址 |
Colorado Springs CO US |
