THIN FILM TRANSISTOR AND METHOD FOR PREPARING SAME

摘要

A thin film transistor and a method for preparing same. The thin film transistor comprises: a substrate (110); a gate (120), a gate insulation layer (130), a first semiconductor layer (140), an etching blocking layer (150) and a second semiconductor layer (160) which are successively provided on the surface of the substrate (110) in a stack; and a source electrode (170) and a drain electrode (180), wherein the source electrode (170) and the drain electrode (180) respectively cover two ends of the second semiconductor layer (160), a first through hole (151) and a second through hole (152) are provided respectively corresponding to the source electrode (170) and the drain electrode (180) on the etching blocking layer (150), the source electrode (170) is connected to the first semiconductor layer (140) via the first through hole (151), and the drain electrode (180) is connected to the first semiconductor layer (140) via the second through hole (152). The thin film transistor can effectively increase an ON state current of the thin film transistor, and has a relatively fast switching speed.