Integrated circuits with diffusion barrier layers and processes for preparing integrated circuits including diffusion barrier layers

摘要

Integrated circuits with a diffusion barrier layers, and processes for preparing integrated circuits including diffusion barrier layers are provided herein. An exemplary integrated circuit includes a semiconductor substrate comprising a semiconductor material, a compound gate dielectric overlying the semiconductor substrate, and a gate electrode overlying the compound gate dielectric. In this embodiment, the compound gate dielectric includes a first dielectric layer, a diffusion barrier layer overlying the first dielectric layer; and a second dielectric layer overlying the diffusion barrier layer; wherein the diffusion barrier layer is made of a material that is less susceptible to diffusion of the semiconductor material than the first dielectric layer, less susceptible to diffusion of oxygen than the second dielectric layer, or both.

主权项

1. An integrated circuit comprising:
a semiconductor substrate comprising a semiconductor material; a compound gate dielectric, comprising:
a first dielectric layer overlying the semiconductor substrate;a diffusion barrier layer overlying the first dielectric layer; anda second dielectric layer overlying the diffusion barrier layer, wherein the second dielectric layer comprises a dielectric material that is doped with yttrium, wherein the yttrium is present in an amount of greater than or equal to 15 mol % in the second dielectric layer;wherein the diffusion barrier layer comprises a material that is less susceptible to diffusion of the semiconductor material than the first dielectric layer, less susceptible to diffusion of oxygen than the second dielectric layer, or both; anda gate electrode overlying the compound gate dielectric.