SEMICONDUCTOR DEVICE HAVING SELF-ALIGNED GATE CONTACTS

摘要

A semiconductor device and a method for manufacturing the device. The method includes: depositing a first dielectric layer on a semiconductor device; forming a plurality of first trenches through the first dielectric layer; depositing an insulating fill in the plurality of first trenches; planarizing the plurality of first trenches; forming a first gate contact between the plurality of first trenches; depositing a first contact fill in the first gate contact; planarizing the first gate contact; depositing a second dielectric layer on the device; forming a plurality of second trenches through the first and second dielectric layers; depositing a conductive fill in the plurality of second trenches; planarizing the plurality of second trenches; forming a second gate contact where the second gate contact is in contact with the first gate contact; depositing a second contact fill in the second gate contact; and planarizing the second gate contact.

主权项

1. A semiconductor device comprising:
a first dielectric layer formed over a semiconductor device having a plurality of gate structures formed on a plurality of active regions and a plurality of diffusion regions formed alongside the plurality of active regions, wherein the plurality of gate structures have a top, a bottom, and two sides, and are encapsulated by an insulating layer on the top and two sides; a plurality of first trenches formed at a plurality of first locations through the first dielectric layer to a first portion of the plurality of diffusion regions, wherein silicide is formed on the first portion of the plurality of diffusion regions and the plurality of first trenches are filled with an insulating material; at least one first gate contact formed through the first dielectric layer and the insulating layer on the top at least one of the plurality of gate structures, wherein the at least one first gate contact is filled with a first contact fill and formed between the plurality of first trenches; a second dielectric layer deposited on the first dielectric layer, the plurality of first filled trenches, and the at least one filled gate contact; a plurality of second trenches formed at a plurality of second locations through the first and second dielectric layers to a second portion of the plurality of diffusion regions, wherein silicide is formed on the second portion of the plurality of diffusion regions and the plurality of second trenches are filled with a conductive material; and at least one second gate contact through the second dielectric layer, wherein the at least one second gate contact is filled with a second contact fill and is in contact with the at least one first gate contact.