发明名称 STORAGE DEVICE
摘要 The present invention provides a storage device adopting a semiconductor device as a storage media having a nonvolatile property and must be erased for writing data, wherein the device divides and manages a logical storage space provided to a higher level device in logical page units, and manages a virtual address space which is a linear address space to which multiple physical blocks of the semiconductor device are mapped. The storage device uses a page mapping table managing a correspondence between a logical page and an address in the virtual address space, and a virtual address configuration information managing a correspondence between an area in the virtual address space and a physical block, in order to manage the correspondence between the respective logical pages and storage areas of the semiconductor device.
申请公布号 US2016335195(A1) 申请公布日期 2016.11.17
申请号 US201415110581 申请日期 2014.01.29
申请人 HITACHI, LTD. 发明人 Kawamura Atsushi;Ogawa Junji
分类号 G06F12/1009;G06F3/06 主分类号 G06F12/1009
代理机构 代理人
主权项 1. A flash memory storage device comprising a controller and multiple flash memory chips, comprising: the controller comprising a processor,a buffer composed of a volatile memory,a storage interface for connecting with a higher level device, anda flash memory interface for connecting the multiple flash memories with the controller; the processor, dividing a logical storage space being provided to the higher level device into logical pages units which are areas having a determined size for management, and managing a virtual address space which is a linear address space to which multiple physical blocks included in the multiple flash memory chips are mapped; and the processor further managing a page mapping table storing a correspondence between the logical page and an address in the virtual address space, and a virtual address configuration information storing a correspondence between an area in the virtual address space and the physical blocks.
地址 Tokyo JP