发明名称 METHOD FOR MANUFACTURING MIRRORS WITH SEMICONDUCTOR SATURABLE ABSORBER
摘要 The invention relates to a method for manufacturing mirrors with saturable semiconducting absorptive material, which includes: depositing a saturable semiconducting absorptive material (205) onto a growth substrate (200) in order to form a structure; depositing at least one metal layer onto the structure such as to form a first mirror (211); and depositing a heat-conductive substrate (212) onto the metal layer by electrodeposition through an electrically insulating mask (312), allowing the selective deposition of the thermally conductive substrate, in order to predefine the perimeter of the mirrors with saturable semiconducting absorptive material.
申请公布号 US2016342067(A1) 申请公布日期 2016.11.24
申请号 US201515112567 申请日期 2015.01.19
申请人 CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE 发明人 Oudar Jean-Louis;Bouchoule Sophie
分类号 G02F1/355;H01S3/04;G02F1/35;H01S3/11 主分类号 G02F1/355
代理机构 代理人
主权项 1. A method for manufacturing mirrors with semiconductor saturable absorber comprising: the deposition onto a substrate for growth of a semiconductor saturable absorptive material so as to form a structure; the deposition of at least one metal layer onto the structure in order to form a first mirror; the deposition by electro-deposition through an electrically-insulating mask of a thermally-conductive substrate onto the metal layer, allowing the selective deposition of the thermally-conductive substrate, in order to predefine the perimeter of the mirrors with semiconductor saturable absorber.
地址 Paris FR