发明名称 |
METHOD OF MANUFACTURING NANO GAP SENSOR USING RESIDUAL STRESS AND NANO GAP SENSOR MANUFACTURED THEREBY |
摘要 |
Provided are a method of manufacturing a nano gap sensor and a nano gap sensor manufactured by the method. According to the method of manufacturing the nano gap sensor, fine cracks are formed in a substrate including a silicon wafer, etc. in order to form the nano gap with simplified processes and low manufacturing costs, and after that, a metal catalyst layer is stacked on the nano gap to manufacture a sensor capable of selectively detecting a certain material or a gas such as hydrogen. In particular, when palladium or a palladium alloy is used as the metal catalyst layer, highly sensitive hydrogen sensors capable of responding various concentrations of hydrogen may be produced in large quantities. |
申请公布号 |
US2016341688(A1) |
申请公布日期 |
2016.11.24 |
申请号 |
US201515114782 |
申请日期 |
2015.06.25 |
申请人 |
KOOKMIN UNIVERSITY INDUSTRY ACADEMY COOPERATION FOUNDATION |
发明人 |
LIM Sihyung |
分类号 |
G01N27/403;C23C14/18;G01N33/487;C23C14/34 |
主分类号 |
G01N27/403 |
代理机构 |
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代理人 |
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主权项 |
1. A method of manufacturing a nano gap sensor, the method comprising:
(a) forming one or more concave portions having notch shapes at an edge of a surface of a substrate; (b) forming an insulating layer on the surface of the substrate on which the one or more concave portions are formed so that a crack, which occurs when a residual stress generated between the substrate and the insulating layer concentrates at a sharp end of the one or more concave portions, propagates and forms a nano gap crossing over the surface of the substrate and having a depth corresponding to an entire thickness of the one or more concave portions and the insulating layer; (c) forming one or more sensing patterns on the insulating layer, wherein the one or more sensing patterns cross over the nano gap; and (d) forming electrodes at opposite ends of the one or more sensing patterns. |
地址 |
Seoul KR |