发明名称 METHOD OF MANUFACTURING NANO GAP SENSOR USING RESIDUAL STRESS AND NANO GAP SENSOR MANUFACTURED THEREBY
摘要 Provided are a method of manufacturing a nano gap sensor and a nano gap sensor manufactured by the method. According to the method of manufacturing the nano gap sensor, fine cracks are formed in a substrate including a silicon wafer, etc. in order to form the nano gap with simplified processes and low manufacturing costs, and after that, a metal catalyst layer is stacked on the nano gap to manufacture a sensor capable of selectively detecting a certain material or a gas such as hydrogen. In particular, when palladium or a palladium alloy is used as the metal catalyst layer, highly sensitive hydrogen sensors capable of responding various concentrations of hydrogen may be produced in large quantities.
申请公布号 US2016341688(A1) 申请公布日期 2016.11.24
申请号 US201515114782 申请日期 2015.06.25
申请人 KOOKMIN UNIVERSITY INDUSTRY ACADEMY COOPERATION FOUNDATION 发明人 LIM Sihyung
分类号 G01N27/403;C23C14/18;G01N33/487;C23C14/34 主分类号 G01N27/403
代理机构 代理人
主权项 1. A method of manufacturing a nano gap sensor, the method comprising: (a) forming one or more concave portions having notch shapes at an edge of a surface of a substrate; (b) forming an insulating layer on the surface of the substrate on which the one or more concave portions are formed so that a crack, which occurs when a residual stress generated between the substrate and the insulating layer concentrates at a sharp end of the one or more concave portions, propagates and forms a nano gap crossing over the surface of the substrate and having a depth corresponding to an entire thickness of the one or more concave portions and the insulating layer; (c) forming one or more sensing patterns on the insulating layer, wherein the one or more sensing patterns cross over the nano gap; and (d) forming electrodes at opposite ends of the one or more sensing patterns.
地址 Seoul KR