| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which inhibits cracks from occurring on an insulation film positioned below wiring while inhibiting increase of wiring resistance.SOLUTION: A semiconductor device 1 includes a semiconductor substrate 12. A passivation film 14 is formed on the semiconductor substrate 12. Wiring 15 containing copper as a main component is formed on the passivation film 14. A barrier metal film 26 having higher rigidity than that of copper is disposed between the passivation film 14 and the wiring 15.SELECTED DRAWING: Figure 4 |
