| 摘要 |
A closed flux magnetic memory cell has a ferromagnetic pinned structure and a ferromagnetic free structure. Data is stored by controlling the relative magnetization between the pinned and free structures. The free structure is formed as a horizontally extending toroid, or tube, that is insulated from the pinned structure. A first conductive line passes through the center of the free structure while a second conductive line is connected to the pinned structure. A third conductive line can be formed through the free structure. This line is insulated from the toroid and the first conductor. The third conductive line can also be located outside the free structure. In operation of one embodiment, the first and third conductive lines are used to control the magnetized direction of the free structure. A resistance between the first and second conductive lines defines the data stored in the memory cell.
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