发明名称 Method for controlling ion density in a sputtering system
摘要 A method for controlling ion density and sputtering rate in a sputtering system is disclosed. In one embodiment, a first pulse-width power signal is applied to the cathode to thereby generate a higher concentration of ions. The pulse-width of the first pulse-width power signal is then decreased to thereby increase the sputtering rate and decrease the ion density around the cathode. Next, the process is repeated to create a modulated signal.
申请公布号 EP1734149(A2) 申请公布日期 2006.12.20
申请号 EP20060011555 申请日期 2006.06.03
申请人 APPLIED FILMS CORPORATION 发明人 STOWELL, MICHAEL W.
分类号 C23C14/34;C23C14/54 主分类号 C23C14/34
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