| 摘要 |
PROBLEM TO BE SOLVED: To provide a technique for making a resist pattern fine.SOLUTION: A resist pattern formation method comprises a first step, a photo mask in which, when a resolution limit of an exposure device is LR, width of a light block area is LB, width of a semi-transmission area contacting one end of the light block area is LH1, and width of the semi-transmission area contacting the other end of the light block area is LH2, LB<LR, LB≤LH1, LB≤LH2, LR<LB+LH1+LH2 are satisfied, is used, for exposing a positive photoresist to light.SELECTED DRAWING: Figure 3 |
