V-SHAPED SIGE RECESS VOLUME TRIM FOR IMPROVED DEVICE PERFORMANCE AND LAYOUT DEPENDENCE

摘要

Some embodiments of the present disclosure relates to a method of forming a transistor device having a strained channel and an associated device. In some embodiments, the method is performed by performing a first etch of a substrate to produce a recess having a largest width at an opening along a top surface of the substrate. An etch stop layer is formed by doping a bottom surface of the recess with a dopant. A second etch of the recess is then performed to form a source/drain recess, wherein the etch stop layer resists etching of the second etch. A stress inducing material is formed within the source/drain recess onto the etch stop layer.

主权项

1. A method of recess formation, comprising:
performing a first etch of a substrate to produce a recess having a largest width at an opening along a top surface of the substrate; forming an etch stop layer by doping a bottom surface of the recess with a dopant; performing a second etch of the recess to form a source/drain recess, wherein the etch stop layer resists etching of the second etch; and forming a stress-inducing material on the etch stop layer within the source/drain recess.