GALLIUM NITRIDE POWER DEVICES

摘要

Enhancement mode III-nitride devices are described. The 2DEG is depleted in the gate region so that the device is unable to conduct current when no bias is applied at the gate. Both gallium face and nitride face devices formed as enhancement mode devices.

主权项

1. A method of forming a III-nitride device, comprising:
forming a GaN material on a substrate; forming a passivation layer over the GaN material, wherein the substrate, the GaN material, and the passivation layer are part of a structure having a first side adjacent the substrate and a second side opposite the substrate; attaching a carrier wafer to the second side of the structure via a bonding layer provided therebetween; and after attaching the carrier wafer to the second side of the structure, removing the substrate to expose a surface of the GaN material.