| 摘要 |
According to various embodiments, an electronic device may include: a layer including a two-dimensional material; a dielectric structure at a first side of the layer, wherein the dielectric structure includes a first contact region and a second contact region, the first contact region defining a first contact area of the layer and the second contact region defining a second contact area of the layer, and the first contact region and the second contact region further defining a device area of the layer between the first contact area and the second contact area of the layer; a first electrode and a second electrode disposed at a second side of the layer opposite to the first side, wherein the first electrode is in direct physical contact with the first contact area of the layer and wherein the second electrode is in direct physical contact with the second contact area of the layer, wherein the first contact region and the second contact region of the dielectric structure are configured to adjust an electric characteristic of the two-dimensional material in the first contact area and in the second contact area of the layer, respectively, so that the electric characteristic of the two-dimensional material in the first contact area and in the second contact area of the layer is different from the electric characteristic of the two-dimensional material in the device area of the layer. |
| 主权项 |
1. An electronic device, comprising:
a layer comprising a two-dimensional material; a dielectric structure at a first side of the layer, wherein the dielectric structure comprises a first contact region and a second contact region, the first contact region defining a first contact area of the layer and the second contact region defining a second contact area of the layer, and the first contact region and the second contact region further defining a device area of the layer between the first contact area and the second contact area of the layer; a first electrode and a second electrode disposed at a second side of the layer opposite to the first side, wherein the first electrode is in direct physical contact with the first contact area of the layer and wherein the second electrode is in direct physical contact with the second contact area of the layer, wherein the first contact region and the second contact region of the dielectric structure are configured to adjust an electric characteristic of the two-dimensional material in the first contact area and in the second contact area of the layer, respectively, so that the electric characteristic of the two-dimensional material in the first contact area and in the second contact area of the layer is different from the electric characteristic of the two-dimensional material in the device area of the layer,wherein the first contact region and the second contact region of the dielectric structure are configured to generate an electrical field to adjust the electric characteristic of the two-dimensional material in the first contact area and in the second contact area of the layer, respectively, andwherein the first contact region and the second contact region of the dielectric structure each comprise doped dielectric material. |
