| 发明名称 |
METHOD OF MAKING A FINFET DEVICE |
| 摘要 |
A device includes a first fin including a first semiconductor material. A first dielectric layer is disposed over a top surface of the first fin. A sidewall of the first dielectric layer has a dip-shape profile. A second dielectric layer is disposed along sidewalls of the first fin. A top surface of the second dielectric layer is substantially coplanar with the top surface of the first fin. A second fin includes a second semiconductor material different from the first semiconductor material. An isolation region is disposed between the first fin and the second fin. |
| 申请公布号 |
US2016254353(A1) |
申请公布日期 |
2016.09.01 |
| 申请号 |
US201615150219 |
申请日期 |
2016.05.09 |
| 申请人 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
发明人 |
Wang Chih-Hao;Tsai Ching-Wei;Wang Chin-Chi |
| 分类号 |
H01L29/10;H01L21/8238;H01L29/66;H01L27/092;H01L29/06 |
主分类号 |
H01L29/10 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A device comprising:
a first fin including a first semiconductor material; a first dielectric layer disposed over a top surface of the first fin, wherein a sidewall of the first dielectric layer has a dip-shape profile; a second dielectric layer disposed along sidewalls of the first fin, wherein a top surface of the second dielectric layer is substantially coplanar with the top surface of the first fin; a second fin including a second semiconductor material different from the first semiconductor material; and a first isolation region disposed between the first fin and the second fin. |
| 地址 |
Hsin-Chu TW |
