发明名称 |
METHOD FOR FABRICATING SEMICONDUCTOR DEVICE |
摘要 |
A method for fabricating a semiconductor device includes forming a first mask on a substrate, forming a first side wall of a fin by performing a first etching of the substrate using the first mask, forming a second mask on the substrate, the second mask being different from the first mask, and forming a second side wall of the fin by performing a second etching of the substrate using the second mask. |
申请公布号 |
US2016254349(A1) |
申请公布日期 |
2016.09.01 |
申请号 |
US201615151747 |
申请日期 |
2016.05.11 |
申请人 |
SUN Min-Chul;PARK Byung-Gook |
发明人 |
SUN Min-Chul;PARK Byung-Gook |
分类号 |
H01L29/06;H01L21/308;H01L29/786;H01L29/66;H01L29/423;H01L29/78;H01L21/306;H01L21/02 |
主分类号 |
H01L29/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
Seoul KR |