OXIDE SEMICONDUCTOR DEVICES, METHODS OF FORMING OXIDE SEMICONDUCTOR DEVICES AND ORGANIC LIGHT EMITTING DISPLAY DEVICES INCLUDING OXIDE SEMICONDUCTOR DEVICES

摘要

An oxide semiconductor device includes a first insulation layer pattern and a second insulation layer pattern disposed on a substrate, an active layer disposed on the first and second insulation layer patterns, the active layer including a source region including the first insulation layer pattern, a drain region including the second insulation layer pattern, and a channel region disposed between the source and drain regions, a source electrode contacting the source region, and a drain electrode contacting the drain region.

主权项

1. An oxide semiconductor device, comprising:
a substrate; a first insulation layer pattern and a second insulation layer pattern disposed on the substrate; an active layer disposed on the first insulation pattern and the second insulation layer pattern, the active layer comprising a source region comprising the first insulation layer pattern, a drain region comprising the second insulation layer pattern, and a channel region disposed between the source region and the drain region; a source electrode contacting the source region; and a drain electrode contacting the drain region.