SOLID-STATE IMAGING DEVICE, METHOD FOR DRIVING THE SAME, METHOD FOR MANUFACTURING THE SAME, AND ELECTRONIC DEVICE

摘要

A solid-state imaging device includes a photoelectric conversion section configured to generate photocharges and a transfer gate that transfers the photocharges to a semiconductor region. A method for driving a unit pixel includes a step of accumulating photocharges in a photoelectric conversion section and a step of accumulating the photocharges in a semiconductor region. A method of forming a solid-state imaging device includes implanting ions into a well layer through an opening in a mask, implanting additional ions into the well layer through an opening in another mask, and implanting other ions into the well layer through an opening in yet another mask. An electronic device includes the solid-state imaging device.

主权项

1. An imaging device comprising:
a first channel portion of a first conductivity-type between a charge accumulation region and a photoelectric conversion section; a second channel portion of the first conductivity-type between a floating diffusion section of a second conductivity-type and the charge accumulation region; and an overflow path of the second conductivity-type between an intermediate electrode of the second conductivity-type and the charge accumulation region.