SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

摘要

In a semiconductor device, a region where a channel is formed is protected. In a semiconductor device, a region protecting a region where a channel is formed is provided in a semiconductor layer. In a semiconductor device, a layer protecting a region where a channel is formed is provided. In a semiconductor device, a region and/or a layer protecting a region where a channel is formed have/has a low density of defect states. In a semiconductor device, a region where a channel is formed has a low density of defect states.

主权项

1. A method for manufacturing a semiconductor device comprising the steps of:
forming a gate electrode; forming a gate insulating film over the gate electrode; forming a first oxide semiconductor layer over the gate insulating film and forming a second oxide semiconductor layer over the first oxide semiconductor layer, forming a conductive film over the second oxide semiconductor layer; and partly etching the conductive film to expose a part of the second oxide semiconductor layer, wherein the part of the second oxide semiconductor layer is etched so that a thickness of the part of the second oxide semiconductor layer is greater than or equal to 0 nm and less than 5 nm.