| 发明名称 |
HIGH CAPACITY LOW COST MULTI-STATE MAGNETIC MEMORY |
| 摘要 |
The present invention is directed to a multi-state current-switching magnetic memory element configured to store a state by current flowing therethrough to switch the state including two or more magnetic tunneling junctions (MTJs) coupled in parallel between a top electrode and a bottom electrode. Each MTJ includes a free layer with a switchable magnetic orientation perpendicular to a layer plane thereof, a fixed layer with a fixed magnetic orientation perpendicular to a layer plane thereof, and a barrier layer interposed between the free layer and the fixed layer. The magnetic memory element is operable to store more than one bit of information. |
| 申请公布号 |
US2016254046(A1) |
申请公布日期 |
2016.09.01 |
| 申请号 |
US201615148694 |
申请日期 |
2016.05.06 |
| 申请人 |
Avalanche Technology, Inc. |
发明人 |
Ranjan Rajiv Yadav;Keshtbod Parviz;Malmhall Roger Klas |
| 分类号 |
G11C11/56;H01L43/10;G11C11/16;H01L27/22;H01L43/02;H01L43/08 |
主分类号 |
G11C11/56 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A multi-state current-switching magnetic memory element configured to store a state by current flowing therethrough to switch the state comprising two or more magnetic tunneling junctions (MTJs) coupled in parallel between a top electrode and a bottom electrode, each MTJ including:
a free layer with a switchable magnetic orientation perpendicular to a layer plane thereof; a fixed layer with a fixed magnetic orientation perpendicular to a layer plane thereof; and a barrier layer interposed between the free layer and the fixed layer. |
| 地址 |
Fremont CA US |
