| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor storage device that can reduce the power consumption of a memory cell when forming a CAM including a nonvolatile storage device, a semiconductor storage device that can suppress the deterioration in repeating data writing, and a nonvolatile storage device that can increase the density of the memory cell.SOLUTION: A semiconductor storage device includes: a first transistor including an oxide semiconductor in a semiconductor layer; a memory circuit including a capacitor that can hold a potential corresponding to written data by turning off the first transistor; and a reference circuit used to refer to the written potential. By detecting the conductive state of a second transistor included in the reference circuit, the address of the matching data is acquired to enable a high-speed searching function.SELECTED DRAWING: Figure 1 |
