| 摘要 |
PROBLEM TO BE SOLVED: To provide a tunnel FET capable of preventing leakage from a junction at the drain side without causing complication in device structure and manufacturing step.SOLUTION: The tunnel FET includes: a semiconductor area of a first conductivity type; a gate electrode which is formed over the surface of the semiconductor area via a gate insulation film; a source area of a first conductivity type or a second conductivity type which is formed at one side of the semiconductor area being interposed by the gate electrode, and the impurity density in which is higher than that in the first semiconductor area; and a drain area having a Schottky barrier junction which is formed at the other side of the semiconductor area being interposed by the gate electrode.SELECTED DRAWING: Figure 1 |
