发明名称 THIN FILM TRANSISTOR SUBSTRATE AND REPAIRING METHOD THEREOF
摘要 A thin film transistor substrate and a method for repairing the same are provided to float an extended part of a maintenance electrode adjacent to a disconnected gate line and connect the floated extended part with the disconnected gate line to repair the gate line, thereby efficiently repairing gate line disconnection without adding additional lines. A plurality of gate lines(110) is formed on a thin film transistor substrate. A plurality of maintenance electrodes(140) includes extended parts(141,142) arranged adjacently to the gate lines, protruded parts(144) connected with the extended parts and partially overlapped with the gate lines, and connecting parts(145) connecting adjacent maintenance electrodes crossing the gate lines. Pixel electrodes(160) are partially overlapped with the maintenance electrodes.
申请公布号 KR20080018473(A) 申请公布日期 2008.02.28
申请号 KR20060080657 申请日期 2006.08.24
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 KIM, BEOM JUN;LEE, JONG HWAN;LEE, JONG HYUK;KANG, SHIN TACK;PARK, HYEONG JUN;KIM, YU JIN
分类号 G02F1/1343 主分类号 G02F1/1343
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