发明名称 METHOD FOR EPIREADY SURFACE TREATMENT ON SIC THIN FILMS
摘要 <p>The preparation of a surface of a slice of material comprises: - (a) a stage of annealing under an oxidising atmosphere, at a temperature of between 1000 and 1300oC for a period of between 1 and 2.5 hours; - (b) a stage of polishing with an abrasive with a base of particles of colloidal silica.</p>
申请公布号 EP1646478(B9) 申请公布日期 2008.07.16
申请号 EP20040767750 申请日期 2004.07.22
申请人 S.O.I.TEC SILICON ON INSULATOR TECHNOLOGIES S.A. 发明人 RICHTARCH, CLAIRE
分类号 B24B37/04;H01L21/04;H01L21/304 主分类号 B24B37/04
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