发明名称 |
METHOD FOR EPIREADY SURFACE TREATMENT ON SIC THIN FILMS |
摘要 |
<p>The preparation of a surface of a slice of material comprises: - (a) a stage of annealing under an oxidising atmosphere, at a temperature of between 1000 and 1300oC for a period of between 1 and 2.5 hours; - (b) a stage of polishing with an abrasive with a base of particles of colloidal silica.</p> |
申请公布号 |
EP1646478(B9) |
申请公布日期 |
2008.07.16 |
申请号 |
EP20040767750 |
申请日期 |
2004.07.22 |
申请人 |
S.O.I.TEC SILICON ON INSULATOR TECHNOLOGIES S.A. |
发明人 |
RICHTARCH, CLAIRE |
分类号 |
B24B37/04;H01L21/04;H01L21/304 |
主分类号 |
B24B37/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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