| 摘要 |
A nonvolatile semiconductor memory device is provided in which stable transistor characteristics with little variation can be obtained, and sufficient threshold voltage and ON current fluctuations can be obtained. A source 2 and a drain 3 formed on a surface of a semiconductor substrate 1, and a gate electrode 5 formed via a gate insulating film 4 on the semiconductor substrate 1 between the source 2 and the drain 3 are provided, and a region of part of the gate electrode 5 forms a non-doped region 10 in which an impurity is not implanted in polysilicon, and another region of the gate electrode 5 forms a doped region 9 in which an impurity is implanted in the polysilicon.
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