发明名称 PLASMA PROCESSING METHOD, PLASMA PROCESSING APPARATUS AND STORAGE MEDIUM
摘要 <P>PROBLEM TO BE SOLVED: To carry out plasma processing with in-plane uniformity by supplying plasma which is formed, by bringing a processing gas into a plasma state to a substrate inside a processing container, in a vacuum atmosphere. <P>SOLUTION: A gas shower head with a number of gas discharge holes formed in a lower surface is provided to a top wall of a treatment container to face a mounting platform for mounting a substrate. The top wall of the processing container at the periphery of the gas shower head is constituted of a dielectric. A substantially radially-parallel electric field is formed through electromagnetic induction, at the periphery of a processing region above the substrate on the dielectric. A negative DC voltage is further applied to the gas shower head. <P>COPYRIGHT: (C)2010,JPO&INPIT
申请公布号 JP2010021446(A) 申请公布日期 2010.01.28
申请号 JP20080182058 申请日期 2008.07.11
申请人 TOKYO ELECTRON LTD 发明人 SAWADA IKUO;KO SHOJUN
分类号 H01L21/3065;C23C16/507;H05H1/46 主分类号 H01L21/3065
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