INGAALN-BASED SEMICONDUCTOR DEVICE

摘要

Transistors using nitride semiconductor layers as channels were experimentally manufactured. The nitride semiconductor layers were all formed through a sputtering method. A deposition temperature was set at less than 600° C., and a polycrystalline or amorphous InxGayAlzN layer was obtained. When composition expressed with a general expression InxGayAlzN (where x+y+z=1.0) falls within a range of 0.3≦x≦1.0 and 0≦z<0.4, a transistor 1a exhibiting an ON/OFF ratio of 102 or higher can be obtained. That is, even a polycrystalline or amorphous film exhibits electric characteristics equal to those of a single crystal. Therefore, it is possible to provide a semiconductor device in which constraints to manufacturing conditions are drastically eliminated, and which includes an InGaAlN-based nitride semiconductor layer which is inexpensive and has excellent electric characteristics as a channel.

主权项

1. An InGaAlN-based semiconductor device, comprising:
a polycrystalline or amorphous nitride semiconductor layer having a formula InxGayAlzN and provided on a substrate, wherein x, y, and z satisfy x+y+z=1.0, 0.3≦x≦1.0 and 0≦z<0.4, and the InGaAlN-based semiconductor device includes the nitride semiconductor layer as a channel.