发明名称 |
MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE |
摘要 |
The present invention makes it possible to improve the accuracy of wet etching and miniaturize a semiconductor device in the case of specifying an active region of a vertical type power MOSFET formed over an SiC substrate by opening an insulating film over the substrate by the wet etching. After a silicon oxide film having a small film thickness and a polysilicon film having a film thickness larger than the silicon oxide film are formed in sequence over an epitaxial layer, the polysilicon film is opened by a dry etching method, successively the silicon oxide film is opened by a wet etching method, and thereby the upper surface of the epitaxial layer in an active region is exposed. |
申请公布号 |
US2016225892(A1) |
申请公布日期 |
2016.08.04 |
申请号 |
US201615095469 |
申请日期 |
2016.04.11 |
申请人 |
Renesas Electronics Corporation |
发明人 |
ARAI Koichi;HAMA Masaki;KAGOTOSHI Yasuaki;HISADA Kenichi |
分类号 |
H01L29/78;H01L29/10;H01L29/06;H01L29/66;H01L29/16 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
1. A manufacturing method of a semiconductor device comprising the steps of:
(a) providing a substrate of a first conductivity type containing silicon carbide; (b) forming a semiconductor layer of the first conductivity type containing silicon carbide over the substrate; (c) forming a first semiconductor region and a second semiconductor region of a second conductivity type different from the first conductivity type, and a third semiconductor region of the first conductivity type between the first semiconductor region and the second semiconductor region over an upper surface of the semiconductor layer; (d) forming a fourth semiconductor region of the first conductivity type in the first semiconductor region and a fifth semiconductor region of the first conductivity type in the second semiconductor region; (e) after the step (d), forming a first semiconductor film over the semiconductor layer; (f) forming a patterned first semiconductor film covering the fourth semiconductor region and the fifth semiconductor region and removing the first semiconductor film over the third semiconductor region, a part of the first semiconductor region and a part of the second semiconductor region; (g) after the step (f), forming a gate insulating film over the semiconductor layer by oxidation treatment, and forming a first insulating film by oxidizing the patterned first semiconductor film, over the fourth semiconductor region and the fifth semiconductor region; and (h) forming a gate electrode over the gate insulating film between the first insulating film over the fourth semiconductor region and the first insulating film over the fifth semiconductor region, wherein a thickness of the first insulating film is larger than that of the gate insulating film. |
地址 |
Tokyo JP |