SILICON CARBIDE SEMICONDUCTOR DEVICE

摘要

There is provided a silicon carbide semiconductor device allowing for integration of a transistor element and a Schottky barrier diode while avoiding reduction of an active region and decrease of a breakdown voltage. A silicon carbide semiconductor device includes a silicon carbide layer. The silicon carbide layer includes: a first region defining an outer circumference portion of an element region in which a transistor element is provided; and a JTE region provided external to the first region in a drift layer and electrically connected to the first region. The first region is provided with at least one opening through which the drift layer is exposed. The silicon carbide semiconductor device further includes a Schottky electrode provided in the opening and forming a Schottky junction with the drift layer.

主权项

1. A silicon carbide semiconductor device comprising:
a silicon carbide layer having a first main surface and a second main surface opposite to the first main surface, the silicon carbide layer including
a drift layer having first conductivity type and defining the first main surface of the silicon carbide layer,a first region provided in the drift layer, the first region having second conductivity type different from the first conductivity type, the first region defining an outer circumference portion of an element region in which a transistor element is provided, anda second region provided external to the first region in the drift layer, the second region having the second conductivity type, the second region being electrically connected to the first region,the first region being provided with at least one opening through which the drift layer is exposed; anda Schottky electrode provided in the opening and forming a Schottky junction with the drift layer.