| 主权项 |
1. An imaging device comprising:
a first transistor; a second transistor; a third transistor; a fourth transistor; and a photoelectric conversion element, wherein one electrode of the photoelectric conversion element is electrically connected to one of a source electrode and a drain electrode of the first transistor, wherein the one electrode of the photoelectric conversion element is electrically connected to one of a source electrode and a drain electrode of the third transistor, wherein the other of the source electrode and the drain electrode of the first transistor is electrically connected to a gate electrode of the second transistor, wherein one of a source electrode and a drain electrode of the second transistor is electrically connected to one of a source electrode and a drain electrode of the fourth transistor, wherein the other electrode of the photoelectric conversion element is electrically connected to a first wiring, wherein a gate electrode of the first transistor is electrically connected to a second wiring, and wherein when a potential supplied to the first wiring is HVDD, the highest value of a potential supplied to the second wiring is lower than HVDD. |
