| 发明名称 |
OFF-CENTER GATE CUT |
| 摘要 |
A semiconductor device includes a diffusion area, a gate structure coupled to the diffusion area, and a dummy gate structure coupled to the diffusion area. The gate structure extends a first distance beyond the diffusion area, and the dummy gate structure extends a second distance beyond the diffusion area. |
| 申请公布号 |
US2016225767(A1) |
申请公布日期 |
2016.08.04 |
| 申请号 |
US201514611090 |
申请日期 |
2015.01.30 |
| 申请人 |
QUALCOMM INCORPORATED |
发明人 |
Liu Yanxiang;Song Stanley Seungchul |
| 分类号 |
H01L27/092;H01L29/08;H01L21/8238 |
主分类号 |
H01L27/092 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor device comprising:
a diffusion area; a gate structure coupled to the diffusion area, the gate structure extending a first distance beyond the diffusion area; and a dummy gate structure coupled to the diffusion area, the dummy gate structure extending a second distance beyond the diffusion area, wherein the second distance is different than the first distance. |
| 地址 |
San Diego CA US |
