| 发明名称 |
METAL LAYOUT FOR RADIO-FREQUENCY SWITCHES |
| 摘要 |
Metal layout for radio-frequency (RF) switches. In some embodiments, an RF switching device can include a plurality of field-effect transistors (FETs) arranged in series to form a stack. Each of at least some of the FETs can include a source contact and a drain contact, a first group of fingers electrically connected to the source contact, and a second group of fingers electrically connected to the drain contact and arranged in an interleaved configuration with the first group of fingers. At least some of the first group of fingers and the second group of fingers can include a first metal M1 and a second metal M2 arranged in a stack. At least one of the first metal M1 and the second metal M2 can include a tapered portion to yield a current carrying capacity that varies as a function of location along a direction in which the corresponding finger extends. |
| 申请公布号 |
US2016225709(A1) |
申请公布日期 |
2016.08.04 |
| 申请号 |
US201514985600 |
申请日期 |
2015.12.31 |
| 申请人 |
SKYWORKS SOLUTIONS, INC. |
发明人 |
ROY Ambarish;BLIN Guillaume Alexandre;ZHU Yu |
| 分类号 |
H01L23/50;H01L23/482;H01L27/12 |
主分类号 |
H01L23/50 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A field-effect transistor (FET) device comprising:
a source contact and a drain contact; a first group of fingers electrically connected to the source contact; and a second group of fingers electrically connected to the drain contact and arranged in an interleaved configuration with respect to the first group of fingers, at least some of the first group of fingers and the second group of fingers including a first metal M1 and a second metal M2 arranged in a stack, at least one of the first metal M1 and the second metal M2 including a tapered portion to yield a current carrying capacity that varies as a function of location along a direction in which the corresponding finger extends. |
| 地址 |
Woburn MA US |
